Vacancy self-trapping during rapid thermal annealing of silicon wafers
نویسندگان
چکیده
منابع مشابه
Vacancy Self-trapping During Rapid Thermal Annealing of Silicon Wafers
The density and spatial distribution of oxide precipitates within a crystalline silicon wafer is of paramount importance for microelectronic device yield. In this letter, the authors show how the formation of previously unconsidered, very small vacancy aggregates can explain macroscopic spatial variations in the oxide precipitate density, which are observed following certain rapid thermal annea...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2006
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.2385069